Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering
Identifieur interne : 001852 ( Main/Repository ); précédent : 001851; suivant : 001853Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering
Auteurs : RBID : Pascal:12-0341154Descripteurs français
- Pascal (Inist)
- Microstructure, Propriété optoélectronique, Semiconducteur III-V, Composé III-V, Couche mince, Pulvérisation haute fréquence, Dépôt physique phase vapeur, Dépôt pulvérisation, Pulvérisation cathodique, Morphologie, Propriété électrique, Propriété optique, Zinc, Structure blende, Polycristal, Phosphure d'indium, Monocristal, Orientation préférentielle, Croissance grain, Effet Hall, Conductivité type n, Absorption optique, Spectre absorption, Bande interdite, Propriété électronique, Mode vibration, Spectrométrie Raman, Pulvérisation irradiation, Rétrodiffusion électron, Diffraction électron, InP, Substrat verre, Zn, 8115C, 7820, 6320, 6114L.
- Wicri :
- concept : Zinc.
English descriptors
- KwdEn :
- Absorption spectra, Blende structure, Cathode sputtering, Electrical properties, Electron backscattering, Electron diffraction, Electronic properties, Energy gap, Grain growth, Hall effect, III-V compound, III-V semiconductors, Indium phosphide, Microstructure, Monocrystals, Morphology, N type conductivity, Optical absorption, Optical properties, Optoelectronic properties, Physical vapor deposition, Polycrystals, Preferred orientation, Radiofrequency sputtering, Raman spectroscopy, Sputter deposition, Sputtering, Thin films, Vibrational modes, Zinc.
Abstract
Indium phosphide (InP) films were deposited onto glass substrates using RF magnetron sputtering by varying the substrate temperature (348-573 K), under constant argon pressure (0.4 Pa) and RF power (150 W). Substrate temperature found to have significant influence on the composition, structure, morphology, electrical and optical properties of InP films. Single phase, nearly stoichiometric and polycrystalline films exhibiting zinc blende structure with strong preferred orientation along (111), was observed for the films grown at a substrate temperature of 448 K. Conical shaped grain growth was observed in the grown films. Hall measurements revealed n-type conductivity in the InP films. The optical absorption studies indicated a direct band gap of 1.35 eV. Various lattice vibrational modes observed by Raman measurements were found to match well with those reported for single-crystal InP.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering</title><author><name sortKey="Hema Chandra, G" uniqKey="Hema Chandra G">G. Hema Chandra</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>INESC Porto, Rua do Campo Alegre 687</s1><s2>4169-007 Porto</s2><s3>PRT</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Portugal</country><wicri:noRegion>4169-007 Porto</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Materials Physics Division, School of Advanced Sciences, VIT University</s1><s2>Vellore 632 014, Tamil Nadu</s2><s3>IND</s3><sZ>1 aut.</sZ></inist:fA14><country>Inde</country><wicri:noRegion>Vellore 632 014, Tamil Nadu</wicri:noRegion></affiliation></author><author><name sortKey="De La Cruz, J Perez" uniqKey="De La Cruz J">J. Pérez De La Cruz</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>INESC Porto, Rua do Campo Alegre 687</s1><s2>4169-007 Porto</s2><s3>PRT</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country>Portugal</country><wicri:noRegion>4169-007 Porto</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">12-0341154</idno><date when="2012">2012</date><idno type="stanalyst">PASCAL 12-0341154 INIST</idno><idno type="RBID">Pascal:12-0341154</idno><idno type="wicri:Area/Main/Corpus">001920</idno><idno type="wicri:Area/Main/Repository">001852</idno></publicationStmt><seriesStmt><idno type="ISSN">0022-0248</idno><title level="j" type="abbreviated">J. cryst. growth</title><title level="j" type="main">Journal of crystal growth</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Absorption spectra</term><term>Blende structure</term><term>Cathode sputtering</term><term>Electrical properties</term><term>Electron backscattering</term><term>Electron diffraction</term><term>Electronic properties</term><term>Energy gap</term><term>Grain growth</term><term>Hall effect</term><term>III-V compound</term><term>III-V semiconductors</term><term>Indium phosphide</term><term>Microstructure</term><term>Monocrystals</term><term>Morphology</term><term>N type conductivity</term><term>Optical absorption</term><term>Optical properties</term><term>Optoelectronic properties</term><term>Physical vapor deposition</term><term>Polycrystals</term><term>Preferred orientation</term><term>Radiofrequency sputtering</term><term>Raman spectroscopy</term><term>Sputter deposition</term><term>Sputtering</term><term>Thin films</term><term>Vibrational modes</term><term>Zinc</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Microstructure</term><term>Propriété optoélectronique</term><term>Semiconducteur III-V</term><term>Composé III-V</term><term>Couche mince</term><term>Pulvérisation haute fréquence</term><term>Dépôt physique phase vapeur</term><term>Dépôt pulvérisation</term><term>Pulvérisation cathodique</term><term>Morphologie</term><term>Propriété électrique</term><term>Propriété optique</term><term>Zinc</term><term>Structure blende</term><term>Polycristal</term><term>Phosphure d'indium</term><term>Monocristal</term><term>Orientation préférentielle</term><term>Croissance grain</term><term>Effet Hall</term><term>Conductivité type n</term><term>Absorption optique</term><term>Spectre absorption</term><term>Bande interdite</term><term>Propriété électronique</term><term>Mode vibration</term><term>Spectrométrie Raman</term><term>Pulvérisation irradiation</term><term>Rétrodiffusion électron</term><term>Diffraction électron</term><term>InP</term><term>Substrat verre</term><term>Zn</term><term>8115C</term><term>7820</term><term>6320</term><term>6114L</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Zinc</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Indium phosphide (InP) films were deposited onto glass substrates using RF magnetron sputtering by varying the substrate temperature (348-573 K), under constant argon pressure (0.4 Pa) and RF power (150 W). Substrate temperature found to have significant influence on the composition, structure, morphology, electrical and optical properties of InP films. Single phase, nearly stoichiometric and polycrystalline films exhibiting zinc blende structure with strong preferred orientation along (111), was observed for the films grown at a substrate temperature of 448 K. Conical shaped grain growth was observed in the grown films. Hall measurements revealed n-type conductivity in the InP films. The optical absorption studies indicated a direct band gap of 1.35 eV. Various lattice vibrational modes observed by Raman measurements were found to match well with those reported for single-crystal InP.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0022-0248</s0></fA01><fA02 i1="01"><s0>JCRGAE</s0></fA02><fA03 i2="1"><s0>J. cryst. growth</s0></fA03><fA05><s2>354</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Microstructural and optoelectronic properties of polycrystalline InP films deposited by RF magnetron sputtering</s1></fA08><fA11 i1="01" i2="1"><s1>HEMA CHANDRA (G.)</s1></fA11><fA11 i1="02" i2="1"><s1>DE LA CRUZ (J. Pérez)</s1></fA11><fA14 i1="01"><s1>INESC Porto, Rua do Campo Alegre 687</s1><s2>4169-007 Porto</s2><s3>PRT</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Materials Physics Division, School of Advanced Sciences, VIT University</s1><s2>Vellore 632 014, Tamil Nadu</s2><s3>IND</s3><sZ>1 aut.</sZ></fA14><fA20><s1>67-75</s1></fA20><fA21><s1>2012</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13507</s2><s5>354000508352720110</s5></fA43><fA44><s0>0000</s0><s1>© 2012 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>39 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>12-0341154</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of crystal growth</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>Indium phosphide (InP) films were deposited onto glass substrates using RF magnetron sputtering by varying the substrate temperature (348-573 K), under constant argon pressure (0.4 Pa) and RF power (150 W). Substrate temperature found to have significant influence on the composition, structure, morphology, electrical and optical properties of InP films. Single phase, nearly stoichiometric and polycrystalline films exhibiting zinc blende structure with strong preferred orientation along (111), was observed for the films grown at a substrate temperature of 448 K. Conical shaped grain growth was observed in the grown films. Hall measurements revealed n-type conductivity in the InP films. The optical absorption studies indicated a direct band gap of 1.35 eV. Various lattice vibrational modes observed by Raman measurements were found to match well with those reported for single-crystal InP.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15C</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H20</s0></fC02><fC02 i1="03" i2="3"><s0>001B60C20</s0></fC02><fC02 i1="04" i2="3"><s0>001B60A14L</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Microstructure</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Microstructure</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Propriété optoélectronique</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Optoelectronic properties</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Propiedad optoelectrónica</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Semiconducteur III-V</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>III-V semiconductors</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Composé III-V</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>III-V 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l="FRE"><s0>Morphologie</s0><s5>10</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Morphology</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Propriété électrique</s0><s5>11</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Electrical properties</s0><s5>11</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Propriété optique</s0><s5>12</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Optical properties</s0><s5>12</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Zinc</s0><s2>NC</s2><s5>13</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Zinc</s0><s2>NC</s2><s5>13</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>Structure blende</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="ENG"><s0>Blende structure</s0><s5>14</s5></fC03><fC03 i1="14" i2="X" l="SPA"><s0>Estructura blenda</s0><s5>14</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Polycristal</s0><s5>15</s5></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Polycrystals</s0><s5>15</s5></fC03><fC03 i1="16" i2="X" l="FRE"><s0>Phosphure d'indium</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="ENG"><s0>Indium phosphide</s0><s5>16</s5></fC03><fC03 i1="16" i2="X" l="SPA"><s0>Indio fosfuro</s0><s5>16</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Monocristal</s0><s5>17</s5></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Monocrystals</s0><s5>17</s5></fC03><fC03 i1="18" i2="X" l="FRE"><s0>Orientation préférentielle</s0><s5>29</s5></fC03><fC03 i1="18" i2="X" l="ENG"><s0>Preferred orientation</s0><s5>29</s5></fC03><fC03 i1="18" i2="X" l="SPA"><s0>Orientación preferencial</s0><s5>29</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Croissance grain</s0><s5>30</s5></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Grain growth</s0><s5>30</s5></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Effet Hall</s0><s5>31</s5></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Hall effect</s0><s5>31</s5></fC03><fC03 i1="21" i2="X" l="FRE"><s0>Conductivité type n</s0><s5>32</s5></fC03><fC03 i1="21" i2="X" l="ENG"><s0>N type conductivity</s0><s5>32</s5></fC03><fC03 i1="21" i2="X" l="SPA"><s0>Conductividad tipo n</s0><s5>32</s5></fC03><fC03 i1="22" i2="X" l="FRE"><s0>Absorption optique</s0><s5>33</s5></fC03><fC03 i1="22" i2="X" l="ENG"><s0>Optical absorption</s0><s5>33</s5></fC03><fC03 i1="22" i2="X" l="SPA"><s0>Absorción óptica</s0><s5>33</s5></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Spectre absorption</s0><s5>34</s5></fC03><fC03 i1="23" i2="3" l="ENG"><s0>Absorption spectra</s0><s5>34</s5></fC03><fC03 i1="24" i2="3" l="FRE"><s0>Bande interdite</s0><s5>35</s5></fC03><fC03 i1="24" i2="3" l="ENG"><s0>Energy gap</s0><s5>35</s5></fC03><fC03 i1="25" i2="X" l="FRE"><s0>Propriété électronique</s0><s5>36</s5></fC03><fC03 i1="25" i2="X" l="ENG"><s0>Electronic properties</s0><s5>36</s5></fC03><fC03 i1="25" i2="X" l="SPA"><s0>Propiedad electrónica</s0><s5>36</s5></fC03><fC03 i1="26" i2="3" l="FRE"><s0>Mode vibration</s0><s5>37</s5></fC03><fC03 i1="26" i2="3" l="ENG"><s0>Vibrational modes</s0><s5>37</s5></fC03><fC03 i1="27" i2="3" l="FRE"><s0>Spectrométrie Raman</s0><s5>38</s5></fC03><fC03 i1="27" i2="3" l="ENG"><s0>Raman spectroscopy</s0><s5>38</s5></fC03><fC03 i1="28" i2="3" l="FRE"><s0>Pulvérisation irradiation</s0><s5>39</s5></fC03><fC03 i1="28" i2="3" l="ENG"><s0>Sputtering</s0><s5>39</s5></fC03><fC03 i1="29" i2="3" l="FRE"><s0>Rétrodiffusion électron</s0><s5>40</s5></fC03><fC03 i1="29" i2="3" l="ENG"><s0>Electron backscattering</s0><s5>40</s5></fC03><fC03 i1="30" i2="3" l="FRE"><s0>Diffraction électron</s0><s5>41</s5></fC03><fC03 i1="30" i2="3" l="ENG"><s0>Electron diffraction</s0><s5>41</s5></fC03><fC03 i1="31" i2="3" l="FRE"><s0>InP</s0><s4>INC</s4><s5>46</s5></fC03><fC03 i1="32" i2="3" l="FRE"><s0>Substrat verre</s0><s4>INC</s4><s5>47</s5></fC03><fC03 i1="33" i2="3" l="FRE"><s0>Zn</s0><s4>INC</s4><s5>48</s5></fC03><fC03 i1="34" i2="3" l="FRE"><s0>8115C</s0><s4>INC</s4><s5>71</s5></fC03><fC03 i1="35" i2="3" l="FRE"><s0>7820</s0><s4>INC</s4><s5>72</s5></fC03><fC03 i1="36" i2="3" l="FRE"><s0>6320</s0><s4>INC</s4><s5>73</s5></fC03><fC03 i1="37" i2="3" l="FRE"><s0>6114L</s0><s4>INC</s4><s5>74</s5></fC03><fN21><s1>261</s1></fN21><fN44 i1="01"><s1>OTO</s1></fN44><fN82><s1>OTO</s1></fN82></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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